Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/66346
Title: Tuning the barrier height at metal/NdNiO3/semiconductor interface
Authors: Wong, Walter Pei De
Keywords: DRNTU::Engineering
Issue Date: 2016
Abstract: This report contains an overview of recent advances in condensed matter physics and specifically the phenomena of metal-insulator transition and some charge transport models. It outlines the basics of band theory of solids and the conditions where certain central assumptions to the band theory of solids no longer hold accurate. It also provides an introductory overview of the characterization techniques that will be utilized in the experiment and a very brief overview of the studies done on NdNiO3 (NNO) and other similar nickelates systems. Temperature dependent I-V measurements were taken using a simple two-probe technique from 85K -300K. The experimental findings strongly indicate that NNO follows a hopping based charge transport mechanism. While the experiments in this project do not have a complete agreement on the contributions from thermally activated charge transport mechanism, this could possibly be a result of unintentional impurity contamination or incomplete ionization of niobium from the strontium titanate.
URI: http://hdl.handle.net/10356/66346
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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