Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/66412
Title: Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures
Authors: Wang, Xingli
Keywords: DRNTU::Engineering::Electrical and electronic engineering
DRNTU::Science
Issue Date: 2016
Source: Wang, X. (2016). Growth and characterization of transition metal dichalcogenides: from monolayers to heterostructures. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Semiconducting transition metal dichalcogenide monolayers (molybdenum disulfide (MoS2) and diselenide (MoSe2), and tungsten disulfide (WS2) and diselenide (WSe2) and their heterostructures have shown good performance in field effect transistors, optoelectronics and flexible devices. However, the lack of the preparation of these monolayers and heterostructures with large area and high quality restrict their practical application. Chemical vapor deposition (CVD) has shown strength on the growth of various two dimensional materials, and are suitable to the growth of these transition metal dichalcogenide monolayers and heterostructures with large area and high quality. In this work, the growth of different monolayers (MoS2, MoSe2 and WS2) with CDV method is explored. And both vertical and lateral heterostructures based on MoS2 and WS2 monolayers have also been synthesized with CVD method as well. Raman, photoluminescence, scanning transmission electron microscopy and electrical transport measurement prove high quality of these CVD grown materials.
URI: https://hdl.handle.net/10356/66412
DOI: 10.32657/10356/66412
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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