Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/67514
Title: RF power amplifier IC design
Authors: Leonard
Keywords: DRNTU::Engineering
Issue Date: 2016
Abstract: Power amplifier is used to amplify signal to desired power level and are commonly used in series of communication devices. In software defined radio and high data-rate communications, wideband power amplifier with high PAE is generally required. In this report, relevant concepts on amplifier theory, detail description of designs and results are presented. The power amplifier is designed in 65 nm CMOS with bandwidth from 1.8 to 5.85 GHz (fractional bandwidth of 124.8%). Different input and output matching circuit circuit enables the PA to achieve maximum PAE of 28.341% to 79.118%. The PA is also able to deliver gain of 14.546 to 19.784 dB. Furthermore, PA has maximum saturation power of 27.034 dBm.
URI: http://hdl.handle.net/10356/67514
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
FYP_Report_Leonard_Final.pdf
  Restricted Access
2.49 MBAdobe PDFView/Open

Page view(s) 20

168
checked on Oct 26, 2020

Download(s) 20

28
checked on Oct 26, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.