Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/67519
Title: Characterization of antimony-based materials
Authors: Ho, Brenda Yeng Yeng
Keywords: DRNTU::Engineering
Issue Date: 2016
Abstract: This project involves the growth and optimization of the III-V antimony based materials including Indium Arsenide Antimonide (InAsSb) and Aluminum Gallium Antimonide (AlGaSb). The goal of this project is to optimize the MOCVD growth of InAsSb, GaSb, and AlGaSb films through different characterization techniques. Several characterization techniques, such as SEM, AFM, XRD, PL, Hall measurement will be used to determine the optimal dopant concentration and III-V ratio so as to produce the ideal films. The factors affecting the growth of the films and the future research development will be discussed in this report as well.
URI: http://hdl.handle.net/10356/67519
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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