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|Title:||Characterization of antimony-based materials||Authors:||Ho, Brenda Yeng Yeng||Keywords:||DRNTU::Engineering||Issue Date:||2016||Abstract:||This project involves the growth and optimization of the III-V antimony based materials including Indium Arsenide Antimonide (InAsSb) and Aluminum Gallium Antimonide (AlGaSb). The goal of this project is to optimize the MOCVD growth of InAsSb, GaSb, and AlGaSb films through different characterization techniques. Several characterization techniques, such as SEM, AFM, XRD, PL, Hall measurement will be used to determine the optimal dopant concentration and III-V ratio so as to produce the ideal films. The factors affecting the growth of the films and the future research development will be discussed in this report as well.||URI:||http://hdl.handle.net/10356/67519||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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