Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/6777
Title: Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
Authors: Yuan, Shu
Hing, Peter
Ooi, B. S.
Zhang, Dao Hua
Chua, Soon Jun
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2003
Abstract: This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes.
URI: http://hdl.handle.net/10356/6777
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Research Reports (Staff & Graduate Students)

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