Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/6785
Title: Simulation and characterization of the process and circuit of the MOSFET device with ISRC structure
Authors: Lee, Yong Kuen.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2001
Abstract: The main objectives of this project are examining and elucidating unique features of Ultra thin film MOSFET by TCAD tools and providing useful understanding and data that could be used in MOS device and circuit design and optimization for high performance, low voltage/power ICes.
URI: http://hdl.handle.net/10356/6785
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Research Reports (Staff & Graduate Students)

Files in This Item:
File Description SizeFormat 
SME-RESEARCH-REPORT_26.pdf
  Restricted Access
1.48 MBAdobe PDFView/Open

Page view(s) 20

417
Updated on Dec 1, 2020

Download(s)

3
Updated on Dec 1, 2020

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.