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Title: Transparent conductive thin film
Authors: Seah, Jireh
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2016
Abstract: Gallium Zinc oxide film was fabricated via sol-gel spin coating technique. The concentration of gallium was varied from 0 to 5at% to determine the optimal amount of with respect to sheet resistance. Even though the addition of gallium in zinc oxide is to improve the sheet resistance of the transparent conducting film, too much gallium would result in negative effects of the film with annealing temperature was also taken into account. The GZO films were then annealed in ambient air in a furnace at 500˚C for 1 hour. All samples yield an average of 80% and above optical transparency.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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