Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/69317
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dc.contributor.authorLiao, Sisi-
dc.date.accessioned2016-12-13T07:11:31Z-
dc.date.available2016-12-13T07:11:31Z-
dc.date.issued2016-
dc.identifier.urihttp://hdl.handle.net/10356/69317-
dc.description.abstractZinc Oxide (ZnO) - based transparent conductive oxide (TCO) thin films have attracted much attention to be an alternative choice instead of currently used Indium-tin-oxide (ITO) thin films in transparent electrode applications. However, it is not clear yet which dopant has the best performance on the ZnO-based transparent conductive thin films, and also there are limits on the development and practical applications. This project is focused on development of low cost transparent conductive thin film, from the economical and conductivity concern, the dopants Galium (Ga) and Aluminium (Al) were chosen in the experiments for comparison. The optimizations on these parameters: (1) no doping and doping concentration from 1.0 mole% to 2.0 mole% of ZnO solution; (2) spin-coating speed of the solution; (3) numbers of coating layers; (4) annealing temperature were carried out for achieving the best performance.en_US
dc.format.extent44 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University-
dc.subjectDRNTU::Engineeringen_US
dc.titleDevelopment of the low cost transparent conductive thin filmsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorTang Xiaohongen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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