Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/69411
Title: Device applications of transition metal oxide thin films
Authors: Li, Hua Kai
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2016
Source: Li, H. K. (2016). Device applications of transition metal oxide thin films. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: The transition metal oxide thin films are technologically important materials in many fields due to their various properties. The objective of this thesis is to study the electrical and optoelectronic characteristics of the transition metal oxide thin films, including the Hafnium oxide (HfOx), Nickel oxide (NiO), and Indium gallium zinc oxide (IGZO) and their potential applications in non-volatile memory, p-n junction, ultraviolet (UV) photodetector, and artificial synapse. All the transition metal oxide thin films in this work are deposited with sputtering or atomic layer deposition techniques, which are fully compatible with the modern complementary-metal-oxide-semiconductor technology. Both the transition metal oxide thin films and the related devices have been characterized by the techniques of transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and current-voltage (I-V) measurement.
URI: https://hdl.handle.net/10356/69411
DOI: 10.32657/10356/69411
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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