Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/69411
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dc.contributor.authorLi, Hua Kaien
dc.date.accessioned2016-12-28T07:16:44Zen
dc.date.available2016-12-28T07:16:44Zen
dc.date.issued2016en
dc.identifier.citationLi, H. K. (2016). Device applications of transition metal oxide thin films. Doctoral thesis, Nanyang Technological University, Singapore.en
dc.identifier.urihttps://hdl.handle.net/10356/69411en
dc.description.abstractThe transition metal oxide thin films are technologically important materials in many fields due to their various properties. The objective of this thesis is to study the electrical and optoelectronic characteristics of the transition metal oxide thin films, including the Hafnium oxide (HfOx), Nickel oxide (NiO), and Indium gallium zinc oxide (IGZO) and their potential applications in non-volatile memory, p-n junction, ultraviolet (UV) photodetector, and artificial synapse. All the transition metal oxide thin films in this work are deposited with sputtering or atomic layer deposition techniques, which are fully compatible with the modern complementary-metal-oxide-semiconductor technology. Both the transition metal oxide thin films and the related devices have been characterized by the techniques of transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and current-voltage (I-V) measurement.en
dc.format.extent117 p.en
dc.language.isoenen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDevice applications of transition metal oxide thin filmsen
dc.typeThesisen
dc.contributor.supervisorChen Tupeien
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en
dc.identifier.doi10.32657/10356/69411en
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Appears in Collections:EEE Theses
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