Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/70842
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dc.contributor.authorChen, Ruiming
dc.date.accessioned2017-05-11T08:39:49Z
dc.date.available2017-05-11T08:39:49Z
dc.date.issued2017
dc.identifier.urihttp://hdl.handle.net/10356/70842
dc.description.abstractGaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement.en_US
dc.format.extent39 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleDesign of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55umen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorFan Weijunen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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