Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/70842
Title: Design of GaAsNBi/GaAs quantum well laser with emission wavelength of 1.55um
Authors: Chen, Ruiming
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Abstract: GaAs-based laser diode with emission wavelength of 1.55um are highly demand due to their potential applications in optical fiber communication. We will use k.p method to calculate the energy level and optical transition to design a 1.55um GaAsNBi/GaAs quantum well laser diodes. The N and Bi compositions and well width will be adjusted and optimized to meet the 1.55um wavelength requirement.
URI: http://hdl.handle.net/10356/70842
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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