Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/71659
Title: Condition monitoring of IGBT
Authors: Thein, Myo
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Abstract: Power semiconductor devices play an important role in industrial applications. In power electronics, semiconductor devices are used as a controlled switch. It has been used in many applications such as high-power equipment, electric railways, power supplies, medical equipment to automobiles and our home appliances. Different types of power semiconductor devices have been used in different applications but Insulated Gate Bipolar Transistors - IGBT has been used in many areas of applications due to their relatively high frequency and switching in power handling capability. Since IGBT has been increasing popularity of being used for high switching applications, it is important to monitor the ageing and degradation so that it can prolong the lifetime of IGBT. This study focus on the condition monitoring of the IGBT. This includes implementation and testing of IGBT, experimental work is carried out on degradation of IGBT using active power cycling method. The in-built machine is set up to degrade the IGBT through power cycling. IGBT characteristics such as on-state resistance, diode forward resistance, power losses are measured and compared for both new and degraded IGBT. Different model of IGBT also used to get the measurement of losses using bond wire cut technique. This condition monitor of IGBT can be used for further experiments and study to make a comparison with other switching devices such as MOSFET and BJT of their lifetime characteristics.
URI: http://hdl.handle.net/10356/71659
Schools: School of Electrical and Electronic Engineering 
Organisations: Rolls-Royce Singapore Pte. Ltd.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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