Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/7222
Title: Stress-induced leakage current in ultra-thin gate oxide
Authors: Ang, Kheng Guan
Keywords: DRNTU::Business::General
Issue Date: 2002
Abstract: This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.
URI: http://hdl.handle.net/10356/7222
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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