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Title: Stress-induced leakage current in ultra-thin gate oxide
Authors: Ang, Kheng Guan
Keywords: DRNTU::Business::General
Issue Date: 2002
Abstract: This thesis will explore the various oxide degradations induced by the electric field stress in 51A and 26A gate oxide which includes accumulation of positive oxide charges, generation of interface states and most importantly the SILC.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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