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|Title:||Engineered substrate for electronics and photonics applications||Authors:||Tavva Yaswanth||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2017||Abstract:||The last decade saw a major shift in semiconductor industry constantly thriving for low power and high performance. We have reached to 10nm node which was never imagined a decade ago. The effect of scaling on performance is not significant at lower nodes compared to the cost/transistor. This calls for other candidates like Ge/Si (Germanium on Silicon) replacing standard silicon. This thesis studies and compiles results on epitaxial growth of germanium on silicon, characterization of interface strain/stress, roughness and threshold dislocation density (TDD) which quantify the growth quality of Ge. Characterization techniques include RAMAN, XRD, AFM are performed on the Ge/Si substrate and reported.||URI:||http://hdl.handle.net/10356/72589||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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