Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/72896
Title: A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology
Authors: Zhang, Haizhong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
Issue Date: 2017
Source: Zhang, H. (2017). A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS behavior in HfOx-based RRAM device, using fully compatible materials with current mainstream CMOS technology, was investigated systematically in terms of physical switching mechanism, current conduction mechanism, self-compliance set-switching mechanism, CRS stability, and engineering method to improve CRS voltage window and read margin for the implementation of high-performance RRAM devices with stable and reliable CRS.
URI: http://hdl.handle.net/10356/72896
DOI: 10.32657/10356/72896
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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