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|Title:||A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology||Authors:||Zhang, Haizhong||Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems||Issue Date:||2017||Source:||Zhang, H. (2017). A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS behavior in HfOx-based RRAM device, using fully compatible materials with current mainstream CMOS technology, was investigated systematically in terms of physical switching mechanism, current conduction mechanism, self-compliance set-switching mechanism, CRS stability, and engineering method to improve CRS voltage window and read margin for the implementation of high-performance RRAM devices with stable and reliable CRS.||URI:||http://hdl.handle.net/10356/72896||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
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