Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/73774
Title: ‘Cut and stick’ ion gels as effective dielectrics for synaptic transistors
Authors: Chen, Yaoyi
Keywords: DRNTU::Engineering
Issue Date: 2018
Abstract: With the development of biomimetic engineering, artificial synaptic devices are deemed of paramount importance in the future brain-inspired neuromorphic computational devices. Meanwhile, flexible electronics have received considerable interests. Here, an artificial synapse based on the thin film transistor gated by a flexible ion gel is proposed for the synaptic emulation. Short term synaptic plasticity, long term synaptic plasticity, filtering and spike time dependent plasticity are all experimentally demonstrated in the artificial synapse. More importantly, we find out that in contrast with the conventional silicon dioxide gates, stronger synaptic behaviors can be induced by the ‘cut and stick’ ion gels at a much lower energy consumption. Our results suggest that the foldable and transferable ion gels have the potential to be incorporated into the low energy, high density and flexible neuromorphic computing devices.
URI: http://hdl.handle.net/10356/73774
Rights: Nanyang Technological University
Fulltext Permission: embargo_restricted_20211212
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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