Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/74691
Title: Designing a two-color quantum well infrared photodetector(QWIP)
Authors: Nithesh Reddy, Lodugu
Keywords: DRNTU::Engineering
Issue Date: 2018
Abstract: As the world and technology advances, the studies on Quantum chemistry also increased its popularity. Among many applications of quantum chemistry, Quantum Well Photodetector(QWIP) is one of the important application. QWIP is an Infrared detector that has important applications for civil, commercial, astronomical, and even surveillance requirements including forecasting the weather conditions. The QWIP technology is a bit of a complexed form of detector that involves three layers where gallium arsenide chips are being sandwiched by silicon wafers and connected them with indium connectors. The technology can be designed to function at various infrared wavelengths like far infrared & near infrared regions and can be produced at very low costs which makes it even advantageous to any other existing technology[1]. In this project, the best 10 µm QWIP is being designed using the compounds Aluminium Gallium Arsenide(AlxGa1-xAs/GaAs) and Gallium Arsenide Nitride Bismuth(GaAsNyBiz/AlxGa1-xAs). Here the QWIP would be designed by analyzing the data of band structures, wave functions, line-up graphs, and Transition matrix elements(TME). Software’s such as Graphic User Interface(GUI) and H16 programs are used to extract the data parameters to analyze and finalize the best QWIP design.
URI: http://hdl.handle.net/10356/74691
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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