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Title: Studies of GaN-based diode characteristics
Authors: Jong, Justin Zhi Liang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2019
Abstract: Gallium Nitride (GaN) based diodes are very attractive for high-frequency, high-power and sensing applications due to their inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these diodes are very promising for the important basic building blocks of many applications such as high-power switches, wireless communications, satellite communications and sensors etc. Thus, in this report, critical Schottky diode parameters, such as ideality factor, doping concentration, etc have been derived by electrical characterization to get more insights on the diode performance.
Schools: School of Electrical and Electronic Engineering 
Research Centres: Nanyang Technopreneurship Centre 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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