Studies of GaN-based diode characteristics

Abstract

Gallium Nitride (GaN) based diodes are very attractive for high-frequency, high-power and sensing applications due to their inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these diodes are very promising for the important basic building blocks of many applications such as high-power switches, wireless communications, satellite communications and sensors etc. Thus, in this report, critical Schottky diode parameters, such as ideality factor, doping concentration, etc have been derived by electrical characterization to get more insights on the diode performance.