Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/77595
Title: Resistive switching memory : next generation non-volatile memory technology
Authors: Poh, Jake Wei Li
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2019
Abstract: The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler metal/insulator/metal structure, nanosecond switching speed and can be integrated in a crossbar architecture to yield a three-dimensional memory suitable for terabyte and above density.
URI: http://hdl.handle.net/10356/77595
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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