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Title: In-memory computing
Authors: Chen, Yuzong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2019
Abstract: This report presents state-of-the-art In-memory Computing (IMC) works using SRAM. A brief introduction of static random access memory (SRAM) operation will be explained by introducing an intuitive method to analyze the circuits. Several state-of-the-art ultra-low-power (ULP) SRAM design techniques and IMC works will be discussed. A simple SRAM circuit simulation is carried out using Cadence and the circuit works correctly as expected. Compared to other FYP works, this report aims to analyze research papers from top circuit conferences such as International Solid-State Circuit Conference (ISSCC) and journals such as IEEE Journal of Solid-State Circuits (JSSC).
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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