Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/77912
Title: Deposition of antimony on wafer by using sputtering system
Authors: Kam, Shu Xia
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2019
Abstract: Antimony thin film is first deposited on the substrate by using the newly set-up sputtering system in Nanoelectronics Lab 1 (NEL1) through sputter deposition process. A thorough study on the newly set-up sputtering system has been done. By varying the deposition duration, we can manipulate the thickness of the thin film deposited on the substrate. By varying the substrate temperature and power used for sputtering will also change the properties of the thin film. Raman spectroscopy is used to determine the structure and property of thin film deposited on the substrate while AFM is used to determine the surface morphology and thickness of the thin film formed. A field effect transistor (FET) device is fabricated based on the thin film and an electrical testing is carried out to investigate the device characteristic of the thin film.
URI: http://hdl.handle.net/10356/77912
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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