Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79245
Title: Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs
Authors: Ong, Shih Ni
Yeo, Kiat Seng
Chew, Kok Wai Johnny
Chan, Lye Hock
Loo, Xi Sung
Do, Manh Anh
Boon, Chirn Chye
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2009
Source: Ong, S. N., Yeo, K. S., Chew K. W. J., Chan, L. H. K., Loo, X. S., Do, M. A., et al. (2009). Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs. Proceedings of the 12th International Symposium on Integrated Circuits, (pp.306-309) Singapore.
Abstract: A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion region. Short channel effects such as channel length modulation effect and mobility degradation due to vertical field were taken into account in the current-voltage model and channel thermal noise model. It was found that the long channel Tsividis’ noise model is still valid for short channel devices by including the proposed effective mobility model and the channel length modulation effect. Good agreement has been obtained between the simulated and measured results across different frequencies, gate biases and drain biases.
URI: https://hdl.handle.net/10356/79245
http://hdl.handle.net/10220/6354
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Fulltext Permission: open
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Appears in Collections:EEE Conference Papers

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