Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79246
Title: A new unified model for channel thermal noise of deep sub-micron RFCMOS
Authors: Ong, Shih Ni
Yeo, Kiat Seng
Chan, Lye Hock
Loo, Xi Sung
Boon, Chirn Chye
Do, Manh Anh
Chew, Kok Wai Johnny
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Issue Date: 2009
Source: Ong, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283.
Abstract: A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.
URI: https://hdl.handle.net/10356/79246
http://hdl.handle.net/10220/6349
DOI: 10.1109/RFIT.2009.5383701
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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