Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79246
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dc.contributor.authorOng, Shih Nien
dc.contributor.authorYeo, Kiat Sengen
dc.contributor.authorChan, Lye Hocken
dc.contributor.authorLoo, Xi Sungen
dc.contributor.authorBoon, Chirn Chyeen
dc.contributor.authorDo, Manh Anhen
dc.contributor.authorChew, Kok Wai Johnnyen
dc.date.accessioned2010-08-24T08:36:10Zen
dc.date.accessioned2019-12-06T13:20:43Z-
dc.date.available2010-08-24T08:36:10Zen
dc.date.available2019-12-06T13:20:43Z-
dc.date.copyright2009en
dc.date.issued2009en
dc.identifier.citationOng, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283.en
dc.identifier.urihttps://hdl.handle.net/10356/79246-
dc.description.abstractA new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.en
dc.format.extent4 p.en
dc.language.isoenen
dc.rights© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuitsen
dc.titleA new unified model for channel thermal noise of deep sub-micron RFCMOSen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceIEEE International Symposium on Radio-Frequency Integration Technology (2009 : Singapore)en
dc.contributor.organizationChartered Semiconductor Manufacturing Ltden
dc.identifier.doi10.1109/RFIT.2009.5383701en
dc.description.versionPublished versionen
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