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Title: An overview of new design techniques for high performance CMOS millimeter-wave circuits
Authors: Ma, Shunli
Ren, Junyan
Yu, Hao
Issue Date: 2014
Source: Ma, S., Ren, J., & Yu, H. (2014). An overview of new design techniques for high performance CMOS millimeter-wave circuits. 2014 14th International Symposium on Integrated Circuits (ISIC 2014).
Conference: International Symposium on Integrated Circuits (14th:2014:ISIC)
Abstract: CMOS millimeter-wave integrated circuits are more attractive due to its potential in higher integration with digitalsignal processing blocks and lower cost, compared to SiGe and GaAs. Meanwhile, the cut-off (ft) frequency of MOSFETs is continuously increased along with the scaling down of transistors as predicted with Moore's law. However, CMOS process suffers from high substrate loss and low quality (Q) of passive devices. As a result, circuit performance is hindered with degraded main block such as VCO, divider and LNA. In this paper, some new structures, such as meta-material oscillator, tunable inductors and coupled oscillator, are summarized and demonstrated to overcome these problems in designing high performance millmeter-wave circuits in nano-CMOS.
DOI: 10.1109/ISICIR.2014.7029579
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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