Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79340
Title: Integration of TaOx-based resistive-switching element and GaAs diode
Authors: Chi, Dong Zhi
Xu, Z.
Tong, X.
Yoon, S. F.
Yeo, Y. C.
Dalapati, G. K.
Chia, Ching Kean
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Xu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Chia, C. K., Dalapati, G. K., et al. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials, 1(3), 032121-.
Series/Report no.: APL materials
Abstract: We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.
URI: https://hdl.handle.net/10356/79340
http://hdl.handle.net/10220/19734
ISSN: 2166-532X
DOI: 10.1063/1.4820421
Rights: © 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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