Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79340
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dc.contributor.authorChi, Dong Zhien
dc.contributor.authorXu, Z.en
dc.contributor.authorTong, X.en
dc.contributor.authorYoon, S. F.en
dc.contributor.authorYeo, Y. C.en
dc.contributor.authorDalapati, G. K.en
dc.contributor.authorChia, Ching Keanen
dc.date.accessioned2014-06-13T03:00:30Zen
dc.date.accessioned2019-12-06T13:22:55Z-
dc.date.available2014-06-13T03:00:30Zen
dc.date.available2019-12-06T13:22:55Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationXu, Z., Tong, X., Yoon, S. F., Yeo, Y. C., Chia, C. K., Dalapati, G. K., et al. (2013). Integration of TaOx-based resistive-switching element and GaAs diode. APL Materials, 1(3), 032121-.en
dc.identifier.issn2166-532Xen
dc.identifier.urihttps://hdl.handle.net/10356/79340-
dc.description.abstractWe report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.en
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesAPL materialsen
dc.rights© 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleIntegration of TaOx-based resistive-switching element and GaAs diodeen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4820421en
dc.description.versionPublished versionen
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