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Title: A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation
Authors: Gopal, Jayaraman Karthik
Do, Anh Tuan
Singh, Pushpapraj
Chua, Geng Li
Kim, Tony Tae-Hyoung
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Gopal, J. K., Do, A. T., Singh, P., Chua, G. L., & Kim, T. T.-H. (2014). A cantilever-based NEM nonvolatile memory utilizing electrostatic actuation and vibrational deactuation for high-temperature operation. IEEE Transactions on Electron Devices, 61(6), 2177-2185.
Series/Report no.: IEEE Transactions on Electron Devices
Abstract: This paper proposes a cantilever-based nanoelectromechanical (NEM) nonvolatile memory (NVM) with a novel write scheme for reliable memory operation at very high-operating temperature (up to 300 °C) in rugged electronics. The memory bit (0/1) is formed by the opening/closing of a cantilever beam. Permanent retention is obtained by adhesive force between two smooth surfaces in contact, eliminating leakage observed in all types of storage-layer-based NVMs. This allows the proposed NEM memory structure to be implemented using a simple bilayer design and easily integrated with the CMOS platform with leakage of 144 pA, which is significantly less compared with SRAM. The experimental analysis of vibrational reset is reported for the first time in this paper. An array structure using the proposed NEM memory device and CMOS devices is presented. Each bit cell consists of one NEM memory device and one nMOS transistor for realizing full random-access operation.
DOI: 10.1109/TED.2014.2317808
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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