Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorArulkumaran, Subramaniamen
dc.contributor.authorNg, Geok Ingen
dc.contributor.authorRanjan, Kumuden
dc.contributor.authorKumar, Chandra Mohan Manojen
dc.contributor.authorFoo, Siew Chuenen
dc.contributor.authorAng, Kian Siongen
dc.contributor.authorVicknesh, Sahmuganathanen
dc.contributor.authorDolmanan, Surani Binen
dc.contributor.authorBhat, Thirumaleshwaraen
dc.contributor.authorTripathy, Sudhiranjanen
dc.identifier.citationArulkumaran, S., Ng, G. I., Ranjan, K., Kumar, C. M. M., Foo, S. C., Ang, K. S., & et al. (2015). Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal. Japanese journal of applied physics, 54.en
dc.description.abstractWe have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. This contact resistance is comparable to the conventional gold-based (Ti/Al/Ni/Au) ohmic contact resistance (Rc = 0.33 Ω mm). A non-gold ohmic contact exhibited a smooth surface morphology with a root mean square surface roughness of ~2.1 nm (scan area of 5 × 5 µm2). The HEMTs exhibited a maximum drain current density of 1110 mA/mm, a maximum extrinsic transconductance of 353 mS/mm, a unity current gain cutoff frequency of 48 GHz, and a maximum oscillation frequency of 66 GHz. These devices exhibited a very small (<8%) drain current collapse for the quiescent biases (Vgs0 = −5 V, Vds0 = 10 V) with a pulse width/period of 200 ns/1 ms. These results demonstrate the feasibility of using a non-gold metal stack as a low Rc ohmic contact for the realization of high-frequency operating InAlN/AlN/GaN HEMTs on Si substrates without using recess etching and regrowth processes.en
dc.format.extent5 p.en
dc.relation.ispartofseriesJapanese journal of applied physicsen
dc.rights© 2015 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].en
dc.titleRecord low contact resistance for InAlN/GaN HEMTs on Si with non-gold metalen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionAccepted versionen
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles

Google ScholarTM



Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.