Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79463
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dc.contributor.authorLiu, Xinfengen
dc.contributor.authorHa, Son Tungen
dc.contributor.authorZhang, Qingen
dc.contributor.authorde la Mata, Mariaen
dc.contributor.authorMagen, Césaren
dc.contributor.authorArbiol, Jordien
dc.contributor.authorSum, Tze Chienen
dc.contributor.authorXiong, Qihuaen
dc.date.accessioned2015-08-21T08:16:52Zen
dc.date.accessioned2019-12-06T13:25:57Z-
dc.date.available2015-08-21T08:16:52Zen
dc.date.available2019-12-06T13:25:57Z-
dc.date.copyright2015en
dc.date.issued2015en
dc.identifier.citationLiu, X., Ha, S. T., Zhang, Q., de la Mata, M., Magen, C., Arbiol, J., et al. (2015). Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals. ACS nano, 9(1), 687-695.en
dc.identifier.urihttps://hdl.handle.net/10356/79463-
dc.description.abstractWe report on the synthesis and optical gain properties of regularly shaped lead iodide (PbI2) platelets with thickness ranging from 10–500 nm synthesized by chemical vapor deposition methods. The as-prepared single crystalline platelets exhibit a near band edge emission of ∼500 nm. Whispering gallery mode (WGM) lasing from individual hexagonal shaped PbI2 platelets is demonstrated in the temperature-range of 77–210 K, where the lasing modes are supported by platelets as thin as 45 nm. The finite-difference time-domain simulation and the edge-length dependent threshold confirm the planar WGM lasing mechanism in such hexagonal shaped PbI2 platelet. Through a comprehensive study of power-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we ascribe the WGM lasing to be biexcitonic in nature. Moreover, for different thicknesses of platelet, the lowest lasing threshold occurs in platelets of ∼120 nm, which attributes to the formation of a good Fabry–Pérot resonance cavity in the vertical direction between the top and bottom platelet surfaces that enhances the reflection. Our present study demonstrates the feasibility of planar light sources based on layered semiconductor materials and that their thickness-dependent threshold characteristic is beneficial for the optimization of layered material based optoelectronic devices.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.description.sponsorshipMOE (Min. of Education, S’pore)en
dc.language.isoenen
dc.relation.ispartofseriesACS nanoen
dc.rights© 2015 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Nano, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/nn5061207].en
dc.subjectDRNTU::Science::Chemistry::Crystallographyen
dc.titleWhispering gallery mode lasing from hexagonal shaped layered lead iodide crystalsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.contributor.researchEnergy Research Institute @NTUen
dc.contributor.researchEnergy Research Institute @NTUen
dc.identifier.doi10.1021/nn5061207en
dc.description.versionAccepted versionen
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