Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79482
Title: Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate
Authors: Chia, Ching Kean
Xu, Z.
Yoon, S. F.
Yeo, Y. C.
Cheng, Y. B.
Dalapati, G. K.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Xu, Z., Yoon, S. F., Yeo, Y. C., Chia, C. K., Cheng, Y. B., & Dalapati, G. K. (2012). Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate. Journal of Applied Physics, 111(4), 044504-.
Series/Report no.: Journal of applied physics
Abstract: In this study, we report the characterization of thin-film GaAsgrown on germanium-on-insulator (GeOI) on Si substrate. A GaAs/GeOI diode with a 600 nm buffer layer showed a rectification of 1.0 × 107 at ±2 V and had an electrical performance similar to that of the reference sample grown on GaAs substrate. We demonstrate two thin diodes (<350 nm in thickness) that still showed high forward densities and rectification properties. The electrical performances of the diodes degraded as the diode active regions were grown closer to the GaAs/Ge interface due to the increase of defects propagating into the active regions. The experimental results were fitted with the thermionic emission equation and the Frenkel-Poole model.
URI: https://hdl.handle.net/10356/79482
http://hdl.handle.net/10220/18862
ISSN: 0021-8979
DOI: 10.1063/1.3686182
Rights: © 2012 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3686182]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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