Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79533
Title: Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
Authors: Tan, Chuan Seng
Bose, Sumanta
Fan, W. J.
Chen, J.
Zhang, D. H.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Source: Bose, S., Fan, W. J., Chen, J., Zhang, D.H., & Tan, C. S. (2014). Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application. 12th International Conference on Fiber Optics and Photonics.
Abstract: We study self-assembled GeSn/SiSn quantum dots for optoelectronic application in the Silicon photonics domain. Valence force field and k.p methods are used to investigate the strain distribution and band structure with size effect.
URI: https://hdl.handle.net/10356/79533
http://hdl.handle.net/10220/25017
DOI: 10.1364/PHOTONICS.2014.S4D.5
Rights: © 2014 OSA. This is the author created version of a work that has been peer reviewed and accepted for publication by International Conference on Fibre Optics and Photonics, Optical Society of America. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1364/PHOTONICS.2014.S4D.5].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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