Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79893
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dc.contributor.authorRichard D'Costa, Vijayen
dc.contributor.authorSubramanian, Sujithen
dc.contributor.authorLi, Daoshengen
dc.contributor.authorWicaksono, Satrioen
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorTok, Eng Soonen
dc.contributor.authorYeo, Yee-Chiaen
dc.date.accessioned2014-07-07T05:45:49Zen
dc.date.accessioned2019-12-06T13:36:13Z-
dc.date.available2014-07-07T05:45:49Zen
dc.date.available2019-12-06T13:36:13Z-
dc.date.copyright2014en
dc.date.issued2014en
dc.identifier.citationRichard D'Costa, V., Subramanian, S., Li, D., Wicaksono, S., Yoon, S. F., Tok, E. S., et al. (2014). Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions. Applied Physics Letters, 104(23), 232102-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/79893-
dc.description.abstractSulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods.en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.rights© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4882917.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleInfrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctionsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4882917en
dc.description.versionPublished versionen
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