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Title: Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions
Authors: Richard D'Costa, Vijay
Subramanian, Sujith
Li, Daosheng
Wicaksono, Satrio
Yoon, Soon Fatt
Tok, Eng Soon
Yeo, Yee-Chia
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Richard D'Costa, V., Subramanian, S., Li, D., Wicaksono, S., Yoon, S. F., Tok, E. S., et al. (2014). Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions. Applied Physics Letters, 104(23), 232102-.
Series/Report no.: Applied Physics Letters
Abstract: Sulfur mono-layer doped In0.53Ga0.47As films were investigated by infrared spectroscopic ellipsometry. The complex dielectric function of doped layers shows free carrier response which can be described by a single Drude oscillator. Electrical resistivities, carrier relaxation times, and active carrier depths are obtained for the shallow n-In0.53Ga0.47As films. Our results indicate that sub-10 nm sulfur-doped layers with active carrier concentration as high as 1.7 × 1019 cm−3 were achieved. Sheet resistances estimated from infrared spectroscopic ellipsometry are in good agreement with those obtained by electrical methods.
ISSN: 0003-6951
DOI: 10.1063/1.4882917
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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