Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79911
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dc.contributor.authorLi, L.en
dc.contributor.authorXu, C. W.en
dc.contributor.authorKnize, R. J.en
dc.contributor.authorTang, Dingyuanen
dc.contributor.authorShen, De Yuanen
dc.date.accessioned2013-07-02T03:08:59Zen
dc.date.accessioned2019-12-06T13:36:37Z-
dc.date.available2013-07-02T03:08:59Zen
dc.date.available2019-12-06T13:36:37Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLi, L., Tang D., Xu, C. W., Knize, R. J., & Shen, D. Y. (2012). Periodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laser. AIP advances, 2(4), 042157-.en
dc.identifier.urihttps://hdl.handle.net/10356/79911-
dc.description.abstractWe report the experimental observation of periodic dark pulse emission in a quantum-well semiconductor laser with delayed optical feedback. We found that under appropriate operation conditions the laser can also emit a stable train of dark pulses. The repetition frequency of the dark pulse is determined by the external cavity length. Splitting of the dark pulse was also observed. We speculate that the observed dark pulse is a kind of temporal cavity soliton formed in the laser.en
dc.language.isoenen
dc.relation.ispartofseriesAIP advancesen
dc.rights© 2012 The Authors. This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of The Authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4769089]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titlePeriodic dark pulse emission induced by delayed feedback in a quantum well semiconductor laseren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1063/1.4769089en
dc.description.versionPublished versionen
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