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Title: Comments on “Negative capacitance effect in semiconductor devices”
Authors: Ma, Jianguo
Yeo, Kiat Seng
Do, Manh Anh
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 1999
Source: Ma, J. G., Yeo, K. S., & Do, M. A. (1999). Comments on “Negative capacitance effect in semiconductor devices”. IEEE Transactions on Electron Devices, 46(12), 2357-2358.
Series/Report no.: IEEE transactions on electron devices
Abstract: Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional equivalent circuit models of devices, such as MOSFET’s, MESFET’s, HEMT’s, and so on, are constructed mainly by using capacitors and resistors together with a voltage-controlled current-source. For fitting the measured terminal behaviors of a device, negative capacitances are often used. In the above paper,1 the authors tried to interpret the negative capacitance (NC) phenomenon theoretically in physics. However, we find some points in the above paper are arguable.
ISSN: 0018-9383
DOI: 10.1109/16.808085
Schools: School of Electrical and Electronic Engineering 
Rights: IEEE Transactions on Electron Devices © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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