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Title: Broad-band design techniques for transimpedance amplifiers
Authors: Lu, Zhenghao
Yeo, Kiat Seng
Ma, Jianguo
Do, Manh Anh
Lim, Wei Meng
Chen, Xueying
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Issue Date: 2007
Source: Lu, Z., Yeo, K. S., Ma, J., Do, M. A., Lim, W. M., & Chen, X. (2007). Broad-band design techniques for transimpedance amplifiers. IEEE Transactions on Circuits and Systems I, 54(3), 590-600.
Series/Report no.: IEEE transactions on circuits and systems I
Abstract: In this paper, a novel bandwidth enhancement technique based on the combination of capacitive degeneration, broad-band matching network, and the regulated cascode (RGC) input stage is proposed and analyzed, which turns the transimpedance amplifier (TIA) design into a fifth-order low-pass filter with Butterworth response. This broad-band design methodology for TIAs is presented with an example implemented in CHRT 0.18-mum 1.8-V RF CMOS technology. Measurement data shows a -3-dB bandwidth of about 8 GHz with 0.25-pF photodiode capacitance. Comparing with the core RGC TIA without capacitive degeneration and broad-band matching network, this design achieves an overall bandwidth enhancement ratio of 3.6 with very small gain ripple. The transimpedance gain is 53 dBOmega with a group delay of 80plusmn20 ps. The chip consumes only 13.5-mW dc power and the measured average input-referred noise current spectral density is 18 pA/radicHz up to 10 GHz.
ISSN: 1549-8328
DOI: 10.1109/TCSI.2006.887610
Rights: IEEE
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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