Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/79981
Title: Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation
Authors: Singh, Nandan
Yan, Chaoyi
Lee, Pooi See
Comini, Elisabetta
Keywords: DRNTU::Science::Chemistry::Analytical chemistry::Gas analysis
Issue Date: 2011
Source: Singh, N., Yan, C., Lee, P. S., & Comini, E. (2011). Sensing properties of different classes of gases based on the nanowire-electrode junction barrier modulation. Nanoscale, 3(4), 1760-1765.
Series/Report no.: Nanoscale
Abstract: The role of contact between semiconducting nanowire and metal electrodes in a single nanowire field effect transistor (NW-FET) is investigated for the sensing of different type of gases. Two different types of In2O3 nanowire devices, namely; Schottky contact device (SCD) and Ohmic contact device (OCD) are evaluated. SCD has shown a superior response to the reducing gas (CO) compared to oxidizing gas (NO), while OCD has shown high sensitivity towards oxidizing gas (NO) compared to the reducing gas (CO) under similar working conditions. The sensing mechanism is dominated by the contact resistance at the metal-semiconductor junction in SCD and the change in nanowire channel conductance dominates in OCD. The Schottky barrier height (SBH) was extracted using low temperature current voltage measurement which provided direct evidence for the notion that the barrier height plays a crucial role in the sensing of different types of gases. The sensing mechanism is illustrated in this work for both devices.
URI: https://hdl.handle.net/10356/79981
http://hdl.handle.net/10220/8696
DOI: 10.1039/c0nr00871k
Rights: © 2011 The Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Nanoscale , The Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/c0nr00871k].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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