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|Title:||Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface||Authors:||Damayanti, M.
Mhaisalkar, Subodh Gautam
|Keywords:||DRNTU::Engineering::Materials||Issue Date:||2006||Source:||Gan, Z., Chen, Z., Mhaisalkar, S. G., Damayanti, M., Chen, Z., Prasad, K., et. al. (2006). Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface. Applied physics letters, 88 (23).||Series/Report no.:||Applied physics letters||Abstract:||Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoelectron spectroscopy, and density functional theory. Higher adhesion energy (Gc) was achieved with low-dose EB treatment, attributed to the strong Ta-arene interaction. However, high-dose EB breaks the aromatic rings partially, resulting in fewer available sites for Ta-arene bonding, leading to lower adhesion. It is suggested that the amount of carbon atoms involved in bonding with the metal is the key to improve the Ta/polymer adhesion.||URI:||https://hdl.handle.net/10356/79990
|DOI:||10.1063/1.2212533||Rights:||© 2006 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2212533. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
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