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Title: Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
Authors: Zhang, Zi-Hui
Tan, Swee Tiam
Liu, Wei
Ju, Zhengang
Zheng, Ke
Kyaw, Zabu
Ji, Yun
Hasanov, Namig
Sun, Xiaowei
Demir, Hilmi Volkan
Issue Date: 2013
Source: Zhang, Z.-H., Tan, S. T., Liu, W., Ju, Z., Zheng, K., Kyaw, Z., et al. (2013). Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata. Optics express, 21(15), 17670.
Series/Report no.: Optics express
Abstract: The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
ISSN: 1094-4087
DOI: 10.1364/OE.21.017670
Schools: School of Electrical and Electronic Engineering 
School of Physical and Mathematical Sciences 
Rights: © 2013 OSA. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of OSA. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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