Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80008
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dc.contributor.authorChen, B. J.en
dc.contributor.authorKwok, H. S.en
dc.contributor.authorZhang, X. H.en
dc.contributor.authorChua, S. J.en
dc.contributor.authorTan, Swee Tiamen
dc.contributor.authorSun, Xiaoweien
dc.contributor.authorFan, Weijunen
dc.date.accessioned2013-12-03T07:58:12Zen
dc.date.accessioned2019-12-06T13:38:39Z-
dc.date.available2013-12-03T07:58:12Zen
dc.date.available2019-12-06T13:38:39Z-
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationTan, S. T., Chen, B. J., Sun, X., Fan, W., Kwok, H. S., Zhang, X. H., & Chua, S. J. (2005). Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition. Journal of applied physics, 98(1), 013505.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/80008-
dc.identifier.urihttp://hdl.handle.net/10220/18001en
dc.description.abstractThe optical band gap of ZnO thin films deposited on fused quartz by metal-organic chemical-vapor deposition was studied. The optical band gap of as-grown ZnO blueshifted from 3.13 to 4.06 eV as the growth temperature decreased from 500 to 200 °C. After annealing, the optical band gap shifted back to the single-crystal value. All the ZnO thin films studied show strong band-edge photoluminescence. X-ray diffraction measurements showed that samples deposited at low temperatures <450 °C> consisted of amorphous and crystalline phases. The redshift of the optical band gap back to the original position after annealing was strong evidence that the blueshift was due to an amorphous phase. The unshifted photoluminescence spectra indicated that the luminescence was due to the crystalline phase of ZnO, which was in the form of nanocrystals embedded in the amorphous phase.en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1940137].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleBlueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor depositionen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR Institute of Materials Research and Engineeringen
dc.contributor.organizationDepartment of Electrical and Electronic Engineering, The Hong Kong University of Scienceen
dc.identifier.doi10.1063/1.1940137en
dc.description.versionPublished versionen
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