Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80036
Title: Dielectric dynamics of epitaxial BiFeO3 thin films
Authors: Ren, Peng
Liu, Peng
Xia, Bin
Zou, Xi
You, Lu
Wang, Junling
Wang, Lan
Issue Date: 2012
Source: Ren, P., Liu, P., Xia, B., Zou, X., You, L., Wang, J., et al. (2012). Dielectric dynamics of epitaxial BiFeO3 thin films. AIP Advances, 2(2), 022133-.
Series/Report no.: AIP advances
Abstract: We report the detailed study on the low temperature dielectric dynamics of the epitaxial BiFeO3 thin films grown on Nb-doped SrTiO3 substrate. The results indicate that the contributions from the thin film dominate the dielectric response, although it comes from both the thin film and the electrode interface. Furthermore, the origins of the low temperature dielectric anomalies are investigated with electric circuit fittings. A possible phase transition at 210 K is revealed from analysis with dielectric loss tangent. The dielectric constants obtained from the constant phase elements (CPEs) are more than 400 even at low temperatures. Finally, the physical significances of the CPE model are discussed.
URI: https://hdl.handle.net/10356/80036
http://hdl.handle.net/10220/10092
DOI: 10.1063/1.4721670
Rights: © 2012 The Authors. This paper was published in AIP Advances and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4721670]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles
SPMS Journal Articles

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