Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80052
Title: Floating-body effect in partially/dynamically/fully depleted DG/SOI MOSFETs based on unified regional modeling of surface and body potentials
Authors: Chiah, Siau Ben
Zhou, Xing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Chiah, S. B., & Zhou, X. (2014). Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials. IEEE Transactions on Electron Devices, 61(2), 333-341.
Series/Report no.: IEEE transactions on electron devices
Abstract: A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. The model accurately describes the physical behavior of the impact-ionization current that gives rise to the hump in the C-Vcharacteristics and the body thickness- and doping-dependent kink effect. The FB potential at the zero-field location in the body is the key to model the electrical characteristics of PD/DD/FD devices with complete body doping and thickness scalability. The model is validated by comparison with I-V C-V data of the numerical devices in a given range of body doping, body thickness, and temperature. Such a scalable model is important for physical and variability modeling of DG/SOI FinFETs with doped body.
URI: https://hdl.handle.net/10356/80052
http://hdl.handle.net/10220/19310
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2288309
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TED.2013.2288309].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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