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Title: Mechanism of polarization fatigue in BiFeO3 : the role of Schottky barrier
Authors: Zhou, Yang
Zou, Xi
You, Lu
Guo, Rui
Lim, Zhi Shiuh
Chen, Lang
Yuan, Guoliang
Wang, Junling
Keywords: DRNTU::Engineering::Materials
Issue Date: 2014
Source: Zhou, Y., Zou, X., You, L., Guo, R., Lim, Z. S., Chen, L., et al. (2014). Mechanism of polarization fatigue in BiFeO3: The role of Schottky barrier. Applied Physics Letters, 104(1), 012903-.
Series/Report no.: Applied physics letters
Abstract: By using piezoelectric force microscopy and scanning Kelvin probe microscopy, we have investigated the domain evolution and space charge distribution in planar BiFeO3 capacitors with different electrodes. It is observed that charge injection at the film/electrode interface leads to domain pinning and polarization fatigue in BiFeO3. Furthermore, the Schottky barrier at the interface is crucial for the charge injection/accumulation process. Lowering the Schottky barrier by using low work function metals as the electrodes can also improve the fatigue property of the device, similar to what oxide electrodes can achieve.
DOI: 10.1063/1.4861231
Schools: School of Materials Science & Engineering 
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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