Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80360
Title: A Novel Subthreshold Voltage Reference Featuring 17ppm per °C TC within -40°C to 125°C and 75dB PSRR
Authors: Jiang, Jize
Shu, Wei
Liu, Jingyuan
Chang, Joseph Sylvester
Keywords: Leakage currents
Power demand
Temperature distribution
Temperature sensors
Threshold voltage
Transistors
Noise
Issue Date: 2015
Source: Jiang, J., Shu, W., Chang, J. S. & Liu, J. (2015). A novel subthreshold voltage reference featuring 17ppm/°C TC within −40°C to 125°C and 75dB PSRR. 2015 IEEE International Symposium on Circuits and Systems (ISCAS), 501-504.
Abstract: Subthreshold voltage references are increasingly prevalent in power-critical applications due to their low-voltage and ultra-low-power attributes. However, the effective temperature range of state-of-the-art subthreshold voltage references remains undesirably narrow for low temperature coefficient (TC) operation and/or their PSRR is low - thereby severely limiting their range of applications. In this paper, we present a novel subthreshold voltage reference embodying a novel paralleled `2-Transistor' structure and a novel auxiliary amplifier. The former serves to facilitate low TC within a wide temperature range, and the latter for high PSRR and low line-sensitivity. The proposed design achieves low TC of 17ppm/°C within a wide effective temperature range of -40°C to 125°C, and high PSRR of 75dB and low line-sensitivity of 0.3%/V with minimum 0.5V supply voltage and 32nW power consumption. Both the TC and PSRR parameters are, at this juncture, the best performance compared to reported subthreshold voltage references, but with a slight power penalty.
URI: https://hdl.handle.net/10356/80360
http://hdl.handle.net/10220/40503
DOI: 10.1109/ISCAS.2015.7168680
Rights: © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ISCAS.2015.7168680].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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