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dc.contributor.authorJiang, Jizeen
dc.contributor.authorShu, Weien
dc.contributor.authorChong, Kwen-Siongen
dc.contributor.authorLin, Tongen
dc.contributor.authorLwin, Ne Kyaw Zwaen
dc.contributor.authorChang, Joseph Sylvesteren
dc.contributor.authorLiu, Jingyuanen
dc.identifier.citationJiang, J., Shu, W., Chong, K.-S., Lin, T., Lwin, N. K. Z., Chang, J. S., et al. (2016). Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process. 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 6-8.en
dc.description.abstractAlthough Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.en
dc.format.extent4 p.en
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
dc.subjectLeakage currentsen
dc.titleTotal Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Processen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conference2016 IEEE International Symposium on Circuits and Systems (ISCAS)en
dc.contributor.researchTemasek Laboratoriesen
dc.description.versionAccepted versionen
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