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https://hdl.handle.net/10356/80395| Title: | Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process | Authors: | Jiang, Jize Shu, Wei Chong, Kwen-Siong Lin, Tong Lwin, Ne Kyaw Zwa Chang, Joseph Sylvester Liu, Jingyuan |
Keywords: | MOSFET Leakage currents |
Issue Date: | 2016 | Source: | Jiang, J., Shu, W., Chong, K.-S., Lin, T., Lwin, N. K. Z., Chang, J. S., et al. (2016). Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process. 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 6-8. | Abstract: | Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended. | URI: | https://hdl.handle.net/10356/80395 http://hdl.handle.net/10220/41417 |
DOI: | 10.1109/ISCAS.2016.7527156 | Rights: | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/ISCAS.2016.7527156. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Conference Papers TL Conference Papers |
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| Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process.pdf | 317.22 kB | Adobe PDF |  View/Open |
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