Please use this identifier to cite or link to this item:
Title: Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
Authors: Jiang, Jize
Shu, Wei
Chong, Kwen-Siong
Lin, Tong
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Liu, Jingyuan
Keywords: MOSFET
Leakage currents
Issue Date: 2016
Source: Jiang, J., Shu, W., Chong, K.-S., Lin, T., Lwin, N. K. Z., Chang, J. S., et al. (2016). Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process. 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 6-8.
Abstract: Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
DOI: 10.1109/ISCAS.2016.7527156
Rights: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers
TL Conference Papers

Files in This Item:
File Description SizeFormat 
Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process.pdf317.22 kBAdobe PDFThumbnail

Citations 20

Updated on Mar 9, 2021

Page view(s) 50

Updated on May 21, 2022

Download(s) 20

Updated on May 21, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.