Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80474
Full metadata record
DC FieldValueLanguage
dc.contributor.authorAgarwal, Sandeepen
dc.contributor.authorWang, Baominen
dc.contributor.authorYang, Hualien
dc.contributor.authorDhanapal, Pravarthanaen
dc.contributor.authorShen, Yuanen
dc.contributor.authorWang, Junlingen
dc.contributor.authorWang, Hailongen
dc.contributor.authorZhao, Jianhuaen
dc.contributor.authorLi, Run-Weien
dc.date.accessioned2018-11-07T01:53:52Zen
dc.date.accessioned2019-12-06T13:50:21Z-
dc.date.available2018-11-07T01:53:52Zen
dc.date.available2019-12-06T13:50:21Z-
dc.date.issued2018en
dc.identifier.citationAgarwal, S., Wang, B., Yang, H., Dhanapal, P., Shen, Y., Wang, J., . . . Li, R.-W. (2018). Spin-valve-like magnetoresistance in a Ni-Mn-In thin film. Physical Review B, 97(21), 214427-. doi:10.1103/PhysRevB.97.214427en
dc.identifier.issn2469-9950en
dc.identifier.urihttps://hdl.handle.net/10356/80474-
dc.identifier.urihttp://hdl.handle.net/10220/46566en
dc.description.abstractSpin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In thin films, which consists of a ferromagnetic phase embedded in an antiferromagnetic matrix. Through transport and magnetic measurements, we confirm that scattering at the interfaces between the two phases gives rise to a unidirectional anisotropy and the spin-valve-like effect in this system. The magnitude of the spin-valve-like magnetoresistance (about 0.4% at 10 K) is stable within the temperature range of 10–400 K. The low- and high-resistance states cannot be destroyed even under a high magnetic field of 100 kOe. This finding opens up a way of realizing the spin valve effect in materials with competing ferromagnetic and antiferromagnetic interactions, where the interface between these phases acts as the active medium.en
dc.format.extent7 p.en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Ben
dc.rights© 2018 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.97.214427]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectSpin Valveen
dc.subjectMagnetoresistanceen
dc.subjectDRNTU::Engineering::Materialsen
dc.titleSpin-valve-like magnetoresistance in a Ni-Mn-In thin filmen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.identifier.doi10.1103/PhysRevB.97.214427en
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:MSE Journal Articles
Files in This Item:
File Description SizeFormat 
Spin-valve-like magnetoresistance in a Ni-Mn-In thin film.pdf2.56 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.