Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/80546
Title: Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium
Authors: Gupta, Shashank
Nam, Donguk
Vuckovic, Jelena
Saraswat, Krishna
Keywords: Germanium
Uniaxial Strain
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Gupta, S., Nam, D., Vuckovic, J., & Saraswat, K. (2018). Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium. Physical Review B, 97(15), 155127-. doi:10.1103/PhysRevB.97.155127
Series/Report no.: Physical Review B
Abstract: A complementary metal-oxide semiconductor compatible on-chip light source is the holy grail of silicon photonics and has the potential to alleviate the key scaling issues arising due to electrical interconnects. Despite several theoretical predictions, a sustainable, room temperature laser from a group-IV material is yet to be demonstrated. In this work, we show that a particular loss mechanism, inter-valence-band absorption (IVBA), has been inadequately modeled until now and capturing its effect accurately as a function of strain is crucial to understanding light emission processes from uniaxially strained germanium (Ge). We present a detailed model of light emission in Ge that accurately models IVBA in the presence of strain and other factors such as polarization, doping, and carrier injection, thereby revising the road map toward a room temperature Ge laser. Strikingly, a special resonance between gain and loss mechanisms at 4%-5% ⟨100⟩ uniaxial strain is found resulting in a high net gain of more than 400cm−1 at room temperature. It is shown that achieving this resonance should be the goal of experimental work rather than pursuing a direct band gap Ge.
URI: https://hdl.handle.net/10356/80546
http://hdl.handle.net/10220/46569
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.97.155127
Schools: School of Electrical and Electronic Engineering 
Rights: © 2018 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The published version is available at: [http://dx.doi.org/10.1103/PhysRevB.97.155127]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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